In-situ angle-resolved photoemission spectrometer (ARPES) combined with a combinatorial laser molecular-beam epitaxy (MBE) oxide thin film growth system,
laser molecular beam epitaxy system
Summary
In order to design novel physical properties appearing at the heterointerface of strongly correlated oxides, it is desired to obtain the knowledge of the electronic, magnetic, and orbital structures in the nm-scale region at the oxide heterointerface. For this purpose, we utilize the system where oxide heterostructures are fabricated and designed by the best possible combination of sophisticated oxide growth techniques using laser molecular beam epitaxy and advanced analysis techniques using synchrotron radiation.
